one_sigma ONE_SIGMA
statistics params
global NOM FAST SLOW STAT X_SIGMA
ind NOM FAST SLOW STAT X_SIGMA
npn NOM FAST SLOW STAT X_SIGMA
lvres NOM FAST SLOW STAT X_SIGMA
hvres NOM FAST SLOW STAT X_SIGMA
salres NOM FAST SLOW STAT X_SIGMA
rnw NOM FAST SLOW STAT X_SIGMA
n1p8 NOM FAST SLOW STAT X_SIGMA
p1p8 NOM FAST SLOW STAT X_SIGMA
n3p3_5p0 NOM FAST SLOW STAT X_SIGMA
p3p3_5p0 NOM FAST SLOW STAT X_SIGMA
cap NOM FAST SLOW STAT X_SIGMA
hpvar NOM FAST SLOW STAT X_SIGMA
hppnp NOM FAST SLOW STAT X_SIGMA
npn_rth NO_RTH RTH
circuit CIRCUIT
fet BSIM PSP
npn_mod HICUM HICUM0
COMMENTS
Description of model files and sections
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global---Uncorrelated global process parameters, e.g. Poly CD, Active CD, Gate Oxide thickness
ind------Parameters specific to Inductors/Backend processing (e.g. metal-cds, metal-thicness, ild, tin resistors)
npn------Parameters specific to SiGe NPNs
lvres----Parameters specific to Low-Value Poly Resistor
hvres----Parameters specific to High-Value Poly Resistor
salres---Parameters specific to Salicided resistors
rnw------Parameters specicic to deeper regions of the nwell (e.g. nwell resistor) 
n1p8-----Parameters common among 1.8V N-type MOSFETs
p1p8-----Parameters common among 1.8V P-type MOSFETs
n3p3_5p0-Parameters common among 3.3/5.0V N-type MOSFETs (Note either 3.3V or 5V are supported)
p3p3_5p0-Parameters common among 3.3/5.0V P-type MOSFETs (Note either 3.3V or 5V are supported)
cap------Parameters specific to MIM Caps
hpvar----Parameters specific to high-performance varactor
hppnp----Parameters specific to High-performance vertical pnp (Note: Parasitic vertical pnp moves with the nwell res.)
npn_rth--Global switch to include/exclude self-heating in Hicum NPN models
fet------Global switch between BSIM and PSP mosfet models for 1.8V and 3.3V FETs
npn_mod--Global switch between Hicum and Hicum0 SiGe NPN models