ucsd_hbt


Model Description

References

Parameter Values

NameDescriptionDefault ValueRangeType
TYPEUnused: Type, only NPN currently`NPN from [`NPN:`NPN] integer
AfnFlicker noise exponent for current1.0 from [-inf:inf] real
BfForward ideal current gain10000.0 from [-inf:inf] real
BfnBE flicker noise exponent for frequency1.0 from [-inf:inf] real
BkdnFlag denoting that BC breakdown should be included [logic]0 from [0:1] integer
BrReverse ideal current gain10000.0 from [-inf:inf] real
BvcCollector-base breakdown voltage BVcbo [V]1000.0 from [-inf:inf] real
CcminMinimum value of intrinsic BC Cj [F]0.0 from [-inf:inf] real
CeminMinimum BE capacitance [F]0.0 from [-inf:inf] real
CjcIntrinsic BC depletion capacitance at zero bias [F]0.0 from [-inf:inf] real
CjcxExtrinsic BC depletion capacitance at zero bias [F]0.0 from [-inf:inf] real
CjeBE depletion capacitance at zero bias [F]0.0 from [0:inf] real
CjsCollector-substrate depletion capacitance (0 bias) [F]0.0 from [-inf:inf] real
CTHThermal capacitance of device [C/joule]0.0 from [-inf:inf] real
CxminMinimum extrinsic Cbc [F]0.0 from [-inf:inf] real
DtmaxMaximum expected temperature rise above heatsink [C]1000.0 from [0:inf] real
EaaAdded activation energy for ISE temp dependence [V]0.0 from [-inf:inf] real
EabAdded activation energy for ISC temp dependence [V]0.0 from [-inf:inf] real
EacActivation energy for ISB temperature dependence [V]0.0 from [-inf:inf] real
EaeActivation energy for ISA temperature dependence [V]0.0 from [-inf:inf] real
EaxAdded activation energy for ISEX temp dependence [V]0.0 from [-inf:inf] real
EgActivation energy for IS temperature dependence [V]1.5 from [-inf:inf] real
FaFactor for specification of avalanche voltage0.9 from [-inf:inf] real
FcFactor for start of high bias BC Cj approximation0.8 from [-inf:inf] real
FceFactor for start of high bias BE Cj approximation0.8 from [-inf:inf] real
FexFactor to determine excess phase0.0 from [-inf:inf] real
Icrit0Critical current for intrinsic Cj variation [A]1.0e3 from [-inf:inf] real
IcsSaturation value for collector-substrate current [A]1.0e-30 from [-inf:inf] real
IkKnee current for dc high injection effect [A]1.0e10 from [-inf:inf] real
IkrkCharacteristic current for Kirk effect [A]1.0e3 from [-inf:inf] real
IsSaturation value for forward collector current [A]1.0e-25 from (0:inf] real
IsaCollector current EB barrier limiting current [A]1.0e10 from [-inf:inf] real
IsbCollector current BC barrier limiting current [A]1.0e10 from [-inf:inf] real
IscSaturation value for intrinsic bc junction current [A]1.0e-30 from [-inf:inf] real
IscxSaturation value for extrinsic bc junction current [A]1.0e-30 from [-inf:inf] real
IseSaturation value for nonideal base current [A]1.0e-30 from [-inf:inf] real
IsexSaturation value for emitter leakage diode [A]1.0e-30 from [-inf:inf] real
ItcCharacteristic current for TFC [A]0.0 from [-inf:inf] real
Itc2Characteristic current for TFC [A]0.0 from [-inf:inf] real
KfnBE flicker noise constant0.0 from [-inf:inf] real
MjcExponent for voltage variation of Intrinsic BC Cj0.33 from [-inf:inf] real
MjcxExponent for voltage variation of Extrinsic BC Cj0.33 from [-inf:inf] real
MjeExponent for voltage variation of BE Cj0.5 from [-inf:inf] real
MjsExponent for voltage variation of CS Cj0.5 from [-inf:inf] real
NaCollector current EB barrier ideality factor2.0 from (0:inf] real
NbCollector current BC barrier ideality factor2.0 from [-inf:inf] real
NbcExponent for BC multiplication factor vs voltage8.0 from [-inf:inf] real
NcIdeality factor for intrinsic bc junction current2.0 from [-inf:inf] real
NcsIdeality factor for collector-substrate current2.0 from [-inf:inf] real
NcxIdeality factor for extrinsic bc junction current2.0 from [-inf:inf] real
NeIdeality factor for nonideal forward base current2.0 from (0:inf] real
NexIdeality factor for emitter leakage diode2.0 from (0:inf] real
NfForward collector current ideality factor1.0 from (0:inf] real
NrReverse current ideality factor1.0 from (0:inf] real
RbiIntrinsic base resistance [ohm]0.0 from [0:inf] real
RbxExtrinsic base resistance [ohm]0.0 from [0:inf] real
RciIntrinsic collector resistance [ohm]0.0 from [0:inf] real
RcxExtrinsic collector resistance [ohm]0.0 from [0:inf] real
ReEmitter resistance [ohm]0.0 from [0:inf] real
RexExtrinsic emitter leakage diode series resistance [ohm]0.0 from [0:inf] real
RthThermal resistance from device to thermal ground [C/W]1.0e-8 from [-inf:inf] real
SelfHeatingFlag denoting self-heating should be included [logic]0 from [0:1] integer
TbcxsExcess BC heterojunction transit time [s]0.0 from [-inf:inf] real
TbexsExcess BE heterojunction transit time [s]0.0 from [-inf:inf] real
TfbBase transit time [s]0.0 from [-inf:inf] real
Tfc0Collector forward transit time [s]0.0 from [-inf:inf] real
TkrkForward transit time for Kirk effect [s]0.0 from [-inf:inf] real
TncCoefficient for NC temperature dependence0.0 from [-inf:inf] real
TneCoefficient for NE temperature dependence0.0 from [-inf:inf] real
TnexCoefficient for NEX temperature dependence0.0 from [-inf:inf] real
TnomTemperature at which model parameters are given [C]27.0 from (-273.15:inf) real
TrReverse charge storage time for intrinsic BC diode [s]0.0 from [-inf:inf] real
TrxCharge storage time for extrinsic BC diode [s]0.0 from [-inf:inf] real
TreCharge storage time [s]0.0 from [-inf:inf] real
TvjcUnused: Coefficient for VJC temperature dependence [V/C]0.0 from [-inf:inf] real
TvjciUnused: Coefficient for VJCI temperature dependence [V/C]0.0 from [-inf:inf] real
TvjcxUnused: Coefficient for VJCX temperature dependence [V/C]0.0 from [-inf:inf] real
TvjeUnused: Coefficient for VJE temperature dependence [V/C]0.0 from [-inf:inf] real
TvjsUnused: Coefficient for VJS temperature dependence [V/C]0.0 from [-inf:inf] real
VafForward Early voltage [V]1000.0 from [-inf:inf] real
VarReverse Early voltage [V]1000.0 from [-inf:inf] real
VjcIntrinsic BC diode builtin potential for Cj estimation [V]1.4 from [-inf:inf] real
VjciVjci [V]0.0 from [-inf:inf] real
VjcxExtrinsic BC diode builtin potential for Cj estimation [V]1.4 from [-inf:inf] real
VjeBE diode builtin potential for Cj estimation [V]1.6 from [-inf:inf] real
VjsCS diode builtin potential for Cj estimation [V]1.4 from [-inf:inf] real
VkrkCharacteristic Voltage for Kirk effect [V]1.0e3 from [-inf:inf] real
VtcCharacteristic voltage for TFC [V]1.0e3 from [-inf:inf] real
XcjcFactor for partitioning extrinsic BC Cj1.0 from [-inf:inf] real
XrbExponent for RB temperature dependence0.0 from [-inf:inf] real
XrcExponent for RC temperature dependence0.0 from [-inf:inf] real
XreExponent for RE temperature dependence0.0 from [-inf:inf] real
XrexExponent for REX temperature dependence0.0 from [-inf:inf] real
XrtExponent for RTH temperature dependence0.0 from [-inf:inf] real
XtbExponent for beta temperature dependence2.0 from [-inf:inf] real
XtiExponent for IS temperature dependence2.0 from [-inf:inf] real
XtikrkExponent for IKRK temperature dependence0.0 from [-inf:inf] real
XtitcExponent for ITC temperature dependence0.0 from [-inf:inf] real
Xtitc2Exponent for ITC2 temperature dependence0.0 from [-inf:inf] real
XttfExponent for TF temperature dependence0.0 from [-inf:inf] real
XttkrkExponent for TKRK temperature dependence0.0 from [-inf:inf] real
XtvkrkExponent for VKRK temperature dependence0.0 from [-inf:inf] real

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