| Name | Description | Default Value | Range | Type
|
| Noise | Set to zero to prevent noise calculation | 1 | from [0:1] | integer |
| Trise | Difference simulation temperature and device temperature [C deg] | 0.0 | from [-inf:inf] | real |
| Temp | Device temperature | - | from (-273.15:inf] | real |
| W | Scaling factor | 1.0 | from (0:inf] | real |
| acgam | Capacitance modulation | 0 | from [0:inf] | real |
| af | Flicker noise exponent | 1.0 | from [0:inf] | real |
| beta | Transconductance parameter (B) | 1.0e-4 | from [0:inf] | real |
| betace | Temperature coefficient of beta | 0 | all x | real |
| cds | Zero-bias D-S junction capacitance [F] | 0 | from [0:inf] | real |
| cgs | Zero-bias G-S junction capacitance [F] | 0 | from [0:inf] | real |
| cgd | Zero-bias G-D junction capacitance [F] | 0 | from [0:inf] | real |
| delta | Output feed back parameter | 0.0 | from [-inf:inf] | real |
| eg | Energy band gap [eV] | 1.11 | from [0:inf] | real |
| fc | Coefficient of fwd-bias depletion | 0.5 | all x | real |
| hfeta | High-frequency VGS feedback | 0 | from [-inf:inf] | real |
| hfe1 | hfeta modulation by VGD [1/V] | 0 | from [-inf:inf] | real |
| hfe2 | hfeta modulation by VGS [1/V] | 0 | from [-inf:inf] | real |
| hfgam | high-frequency VGD feedback | 0 | from [-inf:inf] | real |
| hfg1 | hfgam modulation by VSG [1/V] | 0 | from [-inf:inf] | real |
| hfg2 | hfgam modulation by VDG [1/V] | 0 | from [-inf:inf] | real |
| ibd | Gate junction breakdown current [A] | 0 | from [-inf:inf] | real |
| is | Gate junction satn current [A] | 1.0e-14 | from [0:inf] | real |
| kf | Flicker noise coefficient | 0 | from [0:inf] | real |
| lambda | Channel-length modulation | 0.0 | from [-inf:inf] | real |
| lfgam | Low-frequency feedback | 0 | from [-inf:inf] | real |
| lfg1 | lfgam modulation by VSG [1/V] | 0 | from [-inf:inf] | real |
| lfg2 | lfgam modulation by VDG [1/V] | 0 | from [-inf:inf] | real |
| mvst | Subthreshold modulation [1/V] | 0 | from [-inf:inf] | real |
| mxi | Saturation knee potential modulation | 0 | from [-inf:inf] | real |
| n | Gate p-n emission coefficient | 1 | from (0:inf] | real |
| p | Linear-region power law exponent | 2.0 | from [-inf:inf] | real |
| q | Power-law parameter | 2.0 | from [0:inf] | real |
| rd | Drain ohmic resistance [Ohm] | 0 | from [0:inf] | real |
| rs | Source ohmic resistance [Ohm] | 0 | from [0:inf] | real |
| rg | Gate ohmic resistance [Ohm] | 0 | from [0:inf] | real |
| tnom | Parameter measurement temperature [C] | - | from (-273.15:inf) | real |
| taud | Relaxation time of thermal reduction [s] | 0 | from [-inf:inf] | real |
| taug | Relaxation time for GAM feedback [s] | 0 | from [-inf:inf] | real |
| trg1 | Gate resistance temperature coefficient | 0 | from [-inf:inf] | real |
| trs1 | Source resistance temperature coefficient | 0 | from [-inf:inf] | real |
| trd1 | Drain resistance temperature coefficient | 0 | from [-inf:inf] | real |
| vbd | Gate junction breakdown potential | 1.0 | from [-inf:inf] exclude 0 | real |
| vbi | Gate junction potential [V] | 1.0 | from [0:inf] | real |
| vst | Subthreshold potential [V] | 0 | from [-inf:inf] | real |
| vto | Threshold voltage [V] | -2.0 | from [-inf:inf] | real |
| vtotc | Temperature coefficient of Vto | 0 | from [-inf:inf] | real |
| xc | Cap pinchoff reduction factor | 0 | from [-inf:inf] | real |
| xi | Saturation knee potential factor | 1000 | from [-inf:inf] | real |
| xti | Is temperature coefficient | 0 | from [0:inf] | real |
| z | Knee transition parameter | 1.0 | from [-inf:inf] | real |
| NFET | Flag to indicate type | 1 | from [0:1] | integer |