| Name | Description | Default Value | Range | Type
|
| Tref | Reference Temperature [C] | 25.0 | from [-273.15: inf] | real |
| Dta | Verilog-A parameter | 0.0 | all x | real |
| Exmod | Flag for extended modeling of the reverse current gain | 1.0 | from [0:1] | real |
| Exphi | Flag for distributed high frequency effects in transient | 1.0 | from [0:1] | real |
| Exavl | Flag for extended modeling of avalanche currents | 0.0 | from [0:1] | real |
| Is | Collector-emitter saturation current [A] | 22.0e-18 | from [0:inf] | real |
| Ik | Collector-emitter high injection knee current [A] | 0.1 | from [1.0e-12:inf] | real |
| Ver | Reverse early voltage | 2.5 | from [0.01:inf] | real |
| Vef | Forward early voltage | 44.0 | from [0.01:inf] | real |
| Bf | Ideal forward current gain | 215.0 | from [1.0e-4:inf] | real |
| Ibf | Saturation current of the non-ideal forward base current [A] | 2.7e-15 | from [0:inf] | real |
| Mlf | Non-ideality factor of the non-ideal forward base current [V] | 2.0 | from [0.1:inf] | real |
| Xibi | Fraction of ideal base current that belongs to the sidewall | 0.0 | from [0:1] | real |
| Bri | Ideal reverse current gain | 7.0 | from [1.0e-4:inf] | real |
| Ibr | Saturation current of the non-ideal reverse base current [A] | 1.0e-15 | from [0:inf] | real |
| Vlr | Cross-over voltage of the non-ideal reverse base current [V] | 0.2 | all x | real |
| Xext | Part of Iex, Qex, Qtex, and Isub that depends on the base-collector voltage Vbc1 | 0.63 | from [0:1] | real |
| Wavl | Epilayer thickness used in weak-avalanche model [m] | 1.1e-6 | from [1.0e-19:inf] | real |
| Vavl | Voltage determining the curvature of avalanche current [V] | 3.0 | from [0.01:inf] | real |
| Sfh | Current spreading factor of avalanche model (when EXAVL = 1) | 0.3 | from [0:inf] | real |
| Re | Emitter resistance [Ohm] | 5.0 | from [1.0e-6:inf] | real |
| Rbc | Constant part of the base resistance [Ohm] | 23.0 | from [1.0e-6:inf] | real |
| Rbv | Zero-bias value of the variable part of the base resistance [Ohm] | 18.0 | from [1.0e-6:inf] | real |
| Rcc | Constant part of the collector resistance [Ohm] | 12.0 | from [1.0e-6:inf] | real |
| Rcv | Resistance of the un-modulated epilayer [Ohm] | 150.0 | from [1.0e-6:inf] | real |
| Scrcv | Space charge resistance of the epilayer [Ohm] | 1250.0 | from [1.0e-6:inf] | real |
| Ihc | Critical current for velocity saturation in the epilayer [A] | 4.0e-3 | from [1.0e-12:inf] | real |
| Axi | Smoothness parameter for the onset of quasi-saturation | 0.3 | from [0.02:inf] | real |
| Cje | Zero bias emitter-base depletion capacitance [F] | 73.0e-15 | from [0:inf] | real |
| Vde | Emitter-base diffusion voltage [V] | 0.95 | from [0.05:inf] | real |
| Pe | Emitter-base grading coefficient | 0.4 | from [0.01:0.99] | real |
| Xcje | Fraction of the emitter-base depletion capacitance that belongs to the sidewall | 0.4 | from [0:1] | real |
| Cbeo | Cbeo [F] | 0.0 | from [0:inf] | real |
| Cjc | Zero bias collector-base depletion capacitance [F] | 78.0e-15 | from [0:inf] | real |
| Vdc | Collector-base diffusion voltage [V] | 0.68 | from [0.05:inf] | real |
| Pc | Collector-base grading coefficient | 0.5 | from [0.01:0.99] | real |
| Xp | Constant part of CJC | 0.35 | from [0:0.99] | real |
| Mc | Coefficient for the current modulation of the collector-base depletion capacitance | 0.5 | from [0:1] | real |
| Xcjc | Fraction of the collector-base depletion capacitance under the emitter | 32.0e-3 | from [0:1] | real |
| Cbco | Cbco [F] | 0.0 | from [0:1] | real |
| Mtau | Non-ideality of the emitter stored charge | 1.0 | from [0.1:inf] | real |
| Taue | Minimum transit time of stored emitter charge [S] | 2.0e-12 | from [0:inf] | real |
| Taub | Transit time of stored base charge [S] | 4.2e-12 | from [0:inf] | real |
| Tepi | Transit time of stored epilayer charge [S] | 41.0e-12 | from [0:inf] | real |
| Taur | Transit time of reverse extrinsic stored base charge [S] | 520.0e-12 | from [0:inf] | real |
| Deg | Bandgap difference over the base [EV] | 0.0 | all x | real |
| Xrec | Pre-factor of the recombination part of Ib1 | 0.0 | from [0:inf] | real |
| Aqbo | Temperature coefficient of the zero-bias base charge | 0.3 | all x | real |
| Ae | Temperature coefficient of the resistivity of the emitter | 0.0 | all x | real |
| Ab | Temperature coefficient of the resistivity of the base | 1.0 | all x | real |
| Aepi | Temperature coefficient of the resistivity of the epilayer | 2.50 | all x | real |
| AeX | Temperature coefficient of the resistivity of the extrinsic base | 0.62 | all x | real |
| Ac | Temperature coefficient of the resistivity of the buried layer | 2.0 | all x | real |
| dVgbf | Bandgap voltage difference of forward current gain [V] | 50.0e-3 | all x | real |
| dVgbr | Bandgap voltage difference of reverse current gain [V] | 45.0e-3 | all x | real |
| Vgb | Bandgap voltage of the base [V] | 1.17 | from [0.1:inf] | real |
| Vgc | Bandgap voltage of the collector [V] | 1.18 | from [0.1:inf] | real |
| Vgj | Bandgap voltage recombination emitter-base junction [V] | 1.15 | from [0.1:inf] | real |
| dVgte | Bandgap voltage difference of emitter stored charge [V] | 0.05 | all x | real |
| Af | Exponent of the flicker-noise | 2.0 | from [0.01:inf] | real |
| Kf | Flicker-noise coefficient of the ideal base current | 20.0e-12 | from [0:inf] | real |
| Kfn | Flicker-noise coefficient of the non-ideal base current | 20.0e-12 | from [0:inf] | real |
| Iss | Base-substrate saturation current [A] | 48.0e-18 | from [0:inf] | real |
| Iks | Base-substrate high injection knee current [A] | 250.0e-6 | from [1e-12:inf] | real |
| Cjs | Zero bias collector-substrate depletion capacitance [F] | 315.0e-15 | from [0:inf] | real |
| Vds | Collector-substrate diffusion voltage [V] | 0.62 | from [0.05:inf] | real |
| Ps | Collector-substrate grading coefficient | 0.34 | from [0.01:0.99] | real |
| Vgs | Bandgap voltage of the substrate [V] | 1.20 | from [0.1:inf] | real |
| As | For a closed buried layer: AS = AC, For an open buried layer: AS = AEPI | 1.58 | all x | real |
| Rth | Thermal resistance [deg C/W] | 300.0 | from [0:inf] | real |
| Cth | Thermal capacitance [J/deg C] | 3.0e-9 | from [0:inf] | real |
| SelfHeating | Enter Zero to disable Self-Heating | 1 | from [0:1] | integer |
| NPN | Verilog-A parameter | 1 | from [0:1] | integer |
| PNP | Verilog-A parameter | 0 | from [0:1] | integer |