| Name | Description | Default Value | Range | Type
|
| LEVEL | Level of this model. Must be set to 1 | 1 | from [1: 1] | integer |
| AB | Diffusion area [m2] | 1.0E-12 | from [0.0:inf] | real |
| LS | Length of the side-wall of the diffusion area AB which is not under the gate [m] | 1.0E-06 | from [0.0:inf] | real |
| LG | Length of the side-wall of the diffusion area AB which is under the gate [m] | 1.0E-06 | from [0.0:inf] | real |
| DTA | Temperature offset of the JUNCAP element with respect to TA [C] | 0.0 | from [-inf:inf] | real |
| TR | Temperature at which the parameters have been determined [C] | 25.0 | from [-273.15:inf] | real |
| VR | Voltage at which parameters have been determined [V] | 0.0 | from [-inf:inf] | real |
| JSGBR | Bottom saturation-current density due to electron-hole generation at V = VR [A/m/m] | 1.0E-3 | from [0.0:inf] | real |
| JSDBR | Bottom saturation-current density due to diffusion from back contact [A/m/m] | 1.0E-3 | from [0.0:inf] | real |
| JSGSR | Sidewall saturation-current density due to electron-hole generation at V = VR [A/m] | 1.0E-3 | from [0.0:inf] | real |
| JSDSR | Sidewall saturation-current density due to diffusion from back contact [A/m] | 1.0E-3 | from [0.0:inf] | real |
| JSGGR | Gate edge saturation-current density due to electron-hole generation at V = VR [A/m] | 1.0E-3 | from [0.0:inf] | real |
| JSDGR | Gate edge saturation-current density due to diffusion from back contact [A/m] | 1.0E-3 | from [0.0:inf] | real |
| NB | Emission coefficient of the bottom forward current | 1.0 | from [0.1:inf] | real |
| NS | Emission coefficient of the sidewall forward current | 1.0 | from [0.1:inf] | real |
| NG | Emission coefficient of the gate edge forward current | 1.0 | from [0.1:inf] | real |
| VB | Reverse breakdown voltage [V] | 0.9 | from [-inf:inf] | real |
| CJBR | Bottom junction capacitance at V = VR [F/m/m] | 1.0E-12 | from [0.0:inf] | real |
| CJSR | Sidewall junction capacitance at V = VR [F/m] | 1.0E-12 | from [0.0:inf] | real |
| CJGR | Gate edge junction capacitance at V = VR [F/m] | 1.0E-12 | from [0.0:inf] | real |
| VDBR | Diffusion voltage of the bottom junction at T = TR [V] | 1.0 | from [0.05:inf] | real |
| VDSR | Diffusion voltage of the sidewall junction at T = TR [V] | 1.0 | from [0.05:inf] | real |
| VDGR | Diffusion voltage of the gate edge junction at T = TR [V] | 1.0 | from [0.05:inf] | real |
| PB | Bottom-junction grading coefficient | 0.4 | from [0.05:0.99] | real |
| PS | Sidewall-junction grading coefficient | 0.4 | from [0.05:0.99] | real |
| PG | Gate-edge-junction grading coeffcient | 0.4 | from [0.05:0.99] | real |