| Name | Description | Default Value | Range | Type
|
| L | Channel length (L = xl-xld) [m] | 1.0e-6 | all x | real |
| W | Channel width (W = xw-xwd) [m] | 1.0e-6 | all x | real |
| AD | Area of drain diffusion [m^2] | 1.0e-8 | all x | real |
| AS | Area of source diffusion [m^2] | 1.0e-8 | all x | real |
| PD | Perimeter of drain junction [m] | 1.0e-8 | all x | real |
| PS | Perimeter of source junction [m] | 1.0e-8 | all x | real |
| TYPE | Flag for channel type [NMOS = 1, PMOS = -1] | 1 | from [`PMOS:`NMOS] | integer |
| Noise | Flag to enable noise [Enable = 1] | 1 | from [0:1] | integer |
| Trise | Difference sim. temp and device temp [C deg] | 0.0 | from [-inf:inf] | real |
| Temp | Device temp [C deg] | -- | from (-273.15:inf] | real |
| TOX | Oxide thickness [m] | 5n | all x | real |
| XLD | Gate-overlap length [m] | 0.0 | from [0:50n] | real |
| XWD | Gate-overlap width [m] | 0.0 | from [0:100n] | real |
| XJ | Junction depth [m] | 0.0 | all x | real |
| CGSO | CGSO Capacitance [F] | 0.0 | from [0:inf] | real |
| CGDO | CGSO Capacitance [F] | 0.0 | from [0:inf] | real |
| XPOLYD | Difference between gate-poly and design lengths [m] | 0.0 | all x | real |
| TPOLY | Height of the gate poly-Si [m] | 0.0 | all x | real |
| NSUBC | Substrate-impurity concentration [cm^-3] | 1.0e17 | from [1.0e16:1.0e19] | real |
| VFBC | Flat-band voltage [V] | -1.0 | from [-1.6:-0.8] | real |
| LP | Pocket penetration length [m] | 15n | from [1n:300n] | real |
| NSUBP | Maximum pocket concentration [cm^-3] | 1.0e17 | from [1.0e17:1.0e20] | real |
| SCP1 | Short-channel coefficient 1 for pocket [1/V] | 0.0 | from [0.0:200] | real |
| SCP2 | Short-channel coefficient 2 for pocket [V^-2] | 0.0 | from [0.0:200] | real |
| SCP3 | Short-channel coefficient 3 for pocket [V^-2*m] | 0.0 | from [0.0:1m] | real |
| PARL1 | Strength of lateral-electric-field gradient [-] | 1.0 | from [0.8:1.0] | real |
| PARL2 | Depletion width of channel/contact junction [m] | 0.0 | from [0.0:50n] | real |
| SC1 | Short-channel coefficient 1 [1/V] | 0.0 | from [0.0:200] | real |
| SC2 | Short-channel coefficient 2 [V^-2] | 0.0 | from [0.0:200] | real |
| SC3 | Short-channel coefficient 3 [V^-2*m] | 0.0 | from [0.0:1m] | real |
| WFC | Threshold voltage reduction [F/m] | 0.0 | all x | real |
| W0 | Minimum gate width [log(m)] | 0.0 | all x | real |
| QME1 | Coefficient for quantum mechanical effect [V*m] | 40p | all x | real |
| QME2 | Coefficient for quantum mechanical effect [V] | 300p | all x | real |
| QME3 | Coefficient for quantum mechanical effect [m] | 0.0 | all x | real |
| PGD1 | Strength of poly depletion [V] | 10m | from [0.0:20m] | real |
| PGD2 | Threshold voltage of poly depletion [V] | 1.0 | from [0.0:1.0] | real |
| PGD3 | Vds dependence of poly depletion [-] | 0.8 | from [0.0:1.0] | real |
| RS | Source-contact resistance [V*m / A] | 80u | from [0.0:100u] | real |
| RD | Drain-contact resistance [V*m / A] | 80u | from [0.0:100u] | real |
| RPOCK1 | Resistance coefficient caused by the potential barrier [V^2*m^0.5 / A] | 10m | from [0.0:500m] | real |
| RPOCK2 | Resistance coefficient caused by the potential barrier [V] | 100m | from [0.0:500m] | real |
| BGTMP1 | Bandgap narrowing [eV / K] | 90.25u | all x | real |
| BGTMP2 | Bandgap narrowing [eV*K^-2] | 100n | from [-5u:5u] | real |
| VMAX | Maximum saturation velocity [cm/s] | 7.0e6 | from [1.0e6:100.0e6] | real |
| MUECB0 | Coulomb scattering [cm^2 / (V*s)] | 300 | from [1.0:1K] | real |
| MUECB1 | Coulomb scattering [cm^2 / (V*s)] | 30 | from [1.0:1K] | real |
| MUEPH0 | Phonon scattering [cm^2 (Vcm- 1)^MUEPH1 / (V*s)] | 300m | all x | real |
| MUEPH1 | Phonon scattering [-] | 25k | from [100:1.0e6] | real |
| MUEPH2 | Mobility reduction [-] | 0.0 | from [0.0:100K] | real |
| MUETMP | Temperature dependence of phonon scattering [-] | 1.5 | from [1.0:2.0] | real |
| MUESR0 | Surface-roughness scattering [cm^2 (V*cm^-1)^MUESR1 / (V*s)] | 2.0 | from [1.0:2.0] | real |
| MUESR1 | Surface-roughness scattering [-] | 2.0e15 | from [10T:1.0e17] | real |
| NDEP | Coefficient of effective-electric field [-] | 1.0 | all x | real |
| NINV | Coefficient of effective-electric field [-] | 0.5 | all x | real |
| NINVD | Modification of NINV [1/V) | 1n | from [0.0:20m] | real |
| BB | High-field-mobility degradation [-] | 2.0 | all x | real |
| VOVER | Velocity overshoot effect [cm^ VOVERP] | 10m | from [0.0:500m] | real |
| VOVERP | Lgate dependence of velocity overshoot [-] | 100m | from [0.0:500m] | real |
| CLM1 | Hardness coefficient of channel/contact junction [-] | 700m | from [0.5:1.0] | real |
| CLM2 | Coefficient for QB contribution [1/m] | 200 | from [100:200] | real |
| CLM3 | Coefficient for QI contribution [-] | 1.0 | from [1:5] | real |
| SUB1 | Substrate current coefficient 1 [1/V] | 10 | all x | real |
| SUB2 | Substrate current coefficient 2 [V] | 20 | all x | real |
| SUB3 | Substrate current coefficient 3 [-] | 0.8 | all x | real |
| GIDL1 | GIDL current coefficient 1 [A*V^(-3/2)*m / C] | 50m | all x | real |
| GIDL2 | GIDL current coefficient 2 [V*V^(-3/2) / cm] | 1.0e6 | all x | real |
| GIDL3 | GIDL current coefficient 3 [-] | 300m | all x | real |
| GLEAK1 | gate current coefficient 1 [A*V^(-3/2) / C] | 1.0e6 | all x | real |
| GLEAK2 | gate current coefficient 2 [V*V^(-3/2) / cm] | 20.0e6 | all x | real |
| GLEAK3 | gate current coefficient 3 [-] | 300m | all x | real |
| VZADD0 | symmetry conservation coefficient [V] | 10m | all x | real |
| PZADD0 | symmetry conservation coefficient [V] | 5m | all x | real |
| VDS0 | drain voltage for extracting the low-field mobility [V] | 50m | all x | real |
| NFALP | contribution of the mobility fluctuation [V*s] | 1.0e-16 | all x | real |
| NFTRP | ratio of trap density to attenuation coefficient [V^-1*cm^-2] | 1.0e12 | all x | real |
| CIT | capacitance caused by the interface trapped carriers [F*cm^-2] | 0.0 | all x | real |
| CORSRD | Solve eqs accounting Rs and Rd. | 0 | from [0:1] | integer |
| COCGSO | Calculate cgso | 0 | from [0:1] | integer |
| COCGDO | Calculate cgdo | 0 | from [0:1] | integer |
| COCGBO | Calculate cgbo | 0 | from [0:1] | integer |
| COADOV | Add overlap to intrisic | 0 | from [0:1] | integer |
| COISUB | Calculate isub | 0 | from [0:1] | integer |
| COIIGS | Calculate igs | 0 | from [0:1] | integer |
| COGIDL | Calculate ilg | 0 | from [0:1] | integer |
| CONOIS | Calculate 1/f noise | 0 | from [0:1] | integer |