fbh_hbt


Model Description

Please see Documentation of the FBH HBT Model by Matthias Rudolph for full details.

References

Parameter Values

NameDescriptionDefault ValueRangeType
ModeIgnored1 from [0:4] integer
NoiseIgnored1 from [0:4] integer
DebugIgnored0 from [0:inf) integer
DebugPlusIgnored0 from [0:inf) integer
TempDevice operating temperature, Celsius25.0 from [-273.15:inf) real
RthThermal resistance, K/W0.1 from [0.0:inf) real
CthThermal capacitance700n from [0.0:inf) real
NScaling factor, number of emitter fingers1 from [0:inf) integer
LLength of emitter finger, m30u from [0.0:inf) real
WWidth of emitter finger, m3u from [0.0:inf) real
JsfForward saturation current density, A/um^220e-24 from [0.0:inf) real
NfForward current emission coefficient1.0 from [0.0:inf) real
VgForward thermal activation energy, V, (0 = = disables temperature dependence)1.3 from [-2.0:inf) real
JseB-E leakage saturation current density, A/um^20.0 from [0.0:inf) real
NeB-E leakage emission coefficient0.0 from [0.0:inf) real
RbxxLimiting resistor of B-E leakage diode, Ohm1e6 from [0.0:inf) real
VgbB-E leakage thermal activation energy, V, (0 = = disables temperature dependence)0.0 from [0.0:inf) real
Jsee2nd B-E leakage saturation current density, A/um^20.0 from [0.0:inf) real
Nee2nd B-E leakage emission coefficient0.0 from [0.0:inf) real
Rbbxx2nd Limiting resistor of B-E leakage diode, Ohm1e6 from [0.0:inf) real
Vgbb2nd B-E leakage thermal activation energy, V, (0 = = disables temperature dependence)0.0 from [0.0:inf) real
JsrReverse saturation current density, A/um^220e-18 from [0.0:inf) real
NrReverse current emission coefficient1.0 from [0.0:inf) real
VgrReverse thermal activation energy, V, (0 = = disables temperature dependence)0.0 from [0.0:inf) real
XCjcFraction of Cjc that goes to internal base node0.5 from [0.0:1.0) real
JscB-C leakage saturation current density, A/um^2 (0. switches off diode)0.0 from [0.0:inf) real
NcB-C leakage emission coefficient (0. switches off diode)0.0 from [0.0:inf) real
RcxxLimiting resistor of B-C leakage diode, Ohm1e6 from [0.0:inf) real
VgcB-C leakage thermal activation energy, V, (0 = = disables temperature dependence)0.0 from [0.0:inf) real
BfIdeal forward beta100.0 from [0.0:inf) real
kBetaTemperature coefficient of forward current gain, -1/K, (0 = = disables temperature dependence)0.0 from [0.0:inf) real
BrIdeal reverse beta1.0 from [0.0:inf) real
VAFForward Early voltage, V, (0 = = disables Early Effect)0.0 from [0.0:inf) real
VARReverse Early voltage, V, (0 = = disables Early Effect)0.0 from [0.0:inf) real
IKFForward high-injection knee current, A, (0 = = disables Webster Effect)0.0 from [0.0:inf) real
IKRReverse high-injection knee current, A, (0 = = disables Webster Effect)0.0 from [0.0:inf) real
McC-E breakdown exponent, (0 = = disables collector break-down)0.0 from [0.0:inf) real
BVceoC-E breakdown voltage, V, (0 = = disables collector break-down)0.0 from [0.0:inf) real
kcC-E breakdown factor, (0 = = disables collector break-down)0.0 from [0.0:inf) real
BVeboB-E breakdown voltage, V, (0 = = disables emitter break-down)0.0 from [0.0:inf) real
TrIdeal reverse transit time, s1f from [0.0:inf) real
TrxExtrinsic BC diffusion capacitance, s1f from [0.0:inf) real
TfIdeal forward transit time, s1p from [0.0:inf) real
TftTemperature coefficient of forward transit time0.0 from [0.0:inf) real
ThcsExcess transit time coefficient at base push-out0.0 from [0.0:inf) real
AhcSmoothing parameter for Thcs0.0 from [0.0:inf) real
CjeB-E zero-bias depletion capacitance, F/um^21f from [0.0:inf) real
mjeB-E junction exponential factor0.5 from [0.0:1) real
VjeB-E junction built-in potential, V1.3 from [0.0:inf) real
CjcB-C zero-bias depletion capacitance, F/um^21f from [0.0:inf) real
mjcB-C junction exponential factor0.5 from [0.0:inf) real
VjcB-C junction built-in potential, V1.3 from [0.0:inf) real
kjcB-C capacitance's current-depencence parameter1.0 from (0.0:1] real
CminMinimum B-C depletion capacitance (Vbc dependence), F/um^20.1f from [0.0:inf) real
J0Collector current where Cbc reaches Cmin, A/um^2 (0 = = disables Cbc reduction)1e-3 from [0.0:inf) real
XJ0Fraction of Cmin, lower limit of BC capacitance (Ic dependence) 1.0 from [0.0:1.0] real
Rci0Onset of base push-out at low voltages, Ohm*um^2 (0 = = disables base push-out)1e-3 from (0.0:inf) real
JkOnset of base push-out at high voltages, A/um^2, (0 = = disables base push-out)4e-4 from [0.0:inf) real
RJkSlope of Jk at high currents , Ohm*um^21e-3 from [0.0:inf) real
VcesVoltage shift of base push-out onset, V1e-3 from [0.0:inf) real
RcCollector resistance, Ohm/finger1.0 from (0.0:inf) real
ReEmitter resistance, Ohm/finger1.0 from (0.0:inf) real
RbExtrinsic base resistance, Ohm/finger1.0 from (0.0:inf) real
Rb2Inner Base ohmic resistance, Ohm/finger1.0 from (0.0:inf) real
LcCollector inductance, H --- not yet implemented0.0 from [0.0:inf) real
LeEmitter inductance, H --- not yet implemented0.0 from [0.0:inf) real
LbBase inductance, H --- not yet implemented0.0 from [0.0:inf) real
CqExtrinsic B-C capacitance, F0.0 from [0.0:inf) real
CpbExtrinsic base capacitance, F0.0 from [0.0:inf) real
CpcExtrinsic collector capacitance, F0.0 from [0.0:inf) real
KfbFlicker-noise coefficient --- not yet implemented0.0 from [0.0:inf) real
AfbFlicker-noise exponent --- not yet implemented0.0 from [0.0:inf) real
FfebFlicker-noise frequency exponent --- not yet implemented0.0 from [0.0:inf) real
KbBurst noise coefficient --- not yet implemented0.0 from [0.0:inf) real
AbBurst noise exponent --- not yet implemented0.0 from [0.0:inf) real
FbBurst noise corner frequency, Hz --- not yet implemented0.0 from [0.0:inf) real
KfeFlicker-noise coefficient --- not yet implemented0.0 from [0.0:inf) real
AfeFlicker-noise exponent --- not yet implemented0.0 from [0.0:inf) real
FfeeFlicker-noise frequency exponent --- not yet implemented0.0 from [0.0:inf) real
TnomAmbient temperature at which the parameters were determined20.0 from [-273.15:inf) real

Copyright 2003 Tiburon Design Automation, Inc. All rights reserved.