| Name | Description | Default Value | Range | Type
|
| TYPE | NMOS = 1, PMOS = -1 | 1 | from [-1:1] exclude 0 | integer |
| Noise | Set to zero to prevent noise calculation | 1 | from [0:1] | integer |
| Trise | Difference sim. temp and device temp [C deg] | 0.0 | from [-inf:inf] | real |
| Temp | Device temp [C deg] | -- | from (-273.15:inf] | real |
| TNOM | Temperature [C] | 27 | all x | real |
| L | Channel length [m] | 10E-6 | from [0.0:inf] | real |
| W | Channel width [m] | 10E-6 | from [0.0:inf] | real |
| M | Parallel multiple device number | 1.0 | from [0.0:inf] | real |
| NS | Series multiple device number | 1.0 | from [0.0:inf] | real |
| COX | Gate oxide capacitance per unit area [F] | 2.0E-3 | from [0.0:inf] | real |
| XJ | Junction depth [m] | 300E-9 | from [0.0:inf] | real |
| VTO | Long-channel threshold voltage [V] | 0.5 | from [0.0:inf] | real |
| TCV | Threshold voltage temperature coefficient [V/K] | 1.0e-3 | all x | real |
| GAMMA | Body effect parameter | 0.7 | from [0.0:inf] | real |
| PHI | Bulk Fermi potential [V] | 0.5 | from [0.2:inf] | real |
| KP | Transconductance parameter [A/V/V] | 150E-6 | from [0.0:inf] | real |
| BEX | Mobility temperature exponent | -1.5 | all x | real |
| THETA | Mobility reduction coefficient [1/V] | 0.0 | from [0.0:inf] | real |
| E0 | Mobility reduction coefficient [V/m] | 1.0E8 | all x | real |
| UCRIT | Longitudinal critical field [V/m] | 2.0E6 | from [0.0:inf] | real |
| UCEX | Longitudinal critical field temperature exponent | 0.8 | all x | real |
| LAMBDA | Depletion length coefficient (channel length modulation) | 0.8 | from [0.0:inf] | real |
| DL | Channel width correction [m] | -0.01E-6 | all x | real |
| DW | Channel length correction [m] | -0.01E-6 | all x | real |
| WETA | Narrow-channel effect coefficient | 0.2 | from [0.0:inf] | real |
| LETA | Short-channel effect coefficient | 0.3 | from [0.0:inf] | real |
| Q0 | Reverse short channel effect peak charge density | 230E-6 | from [0.0:inf] | real |
| LK | Reverse short channel effect characteristic length [m] | 0.4E-6 | from [0.0:inf] | real |
| IBA | First impact ionization coefficient [1/m] | 5.0E8 | from [0.0:inf] | real |
| IBB | Second impact ionization coefficient [V/m] | 4.0E8 | from [0.0:inf] | real |
| IBBT | Temperature coefficient for IBB [1/K] | 9.0e-4 | all x | real |
| IBN | Saturation voltage factor for impact ionization | 1.0 | from [0.0:inf] | real |
| RSH | Sheet resistance [Ohms] | 0.0 | from [0.0:inf] | real |
| HDIF | Sheet resistance multipler | 0.5E-6 | from [0.0:inf] | real |
| AVTO | Area related threshold voltage mismatch parameter [Vm] | 1E-6 | from [0.0:inf] | real |
| AKP | Area related gain mismatch parameter [m] | 1E-6 | from [0.0:inf] | real |
| AGAMMA | Area related body effect mismatch parameter [sqr(V) m] | 1E-6 | from [0.0:inf] | real |
| AF | Flicker noise exponent | 1.0 | from (0:inf) | real |
| KF | Flicker noise coefficient | 0.0 | from [0:inf) | real |