| Name | Description | Default Value | Range | Type
|
| TYPE | Unused: Type, only NFET currently | `NFET | from [`NFET:`NFET] | integer |
| AF | Flicker noise exponent | 1 | from [0:inf] | real |
| ALPHA | Saturation voltage parameter | 2.0 | from [-inf:inf] | real |
| AREA | Area scaling factor | 1.0 | from (0:inf] | real |
| BETA | Transconductance parameter | 1.0e-4 | from [0:inf] | real |
| BETACE | Beta temp coeff | 0 | all x | real |
| CDS | Zero-bias D-S junction capacitance [F] | 0 | from [0:inf] | real |
| CGS | Zero-bias G-S junction capacitance [F] | 0 | from [0:inf] | real |
| CGD | Zero-bias G-D junction capacitance [F] | 0 | from [0:inf] | real |
| EG | Band gap | 1.11 | from [0:inf] | real |
| FC | Coefficient for fwd-bias depl cap | 0.5 | from (0:inf) | real |
| IMAX | Diode explosion current [A] | 1 | from [0:inf] | real |
| IS | Gate junctn saturation current [A] | 1.0e-14 | from [0:inf] | real |
| KF | Flicker noise coefficient | 0 | from [0:inf] | real |
| LAMBDA | Channel-length modulation | 0.0 | from [0:inf] | real |
| M | Gate p0n grading coeff. | 0.5 | from [0:inf] | real |
| N | Gate p-n emission coeff | 1 | from [0:inf] exclude 0 | real |
| RD | Drain ohmic resistance [Ohm] | 0 | from [0:inf] | real |
| RS | source ohmic resistance [Ohm] | 0 | from [0:inf] | real |
| RG | gate ohmic resistance [Ohm] | 0 | from [0:inf] | real |
| TRG1 | RG temperature coefficient | 0 | from [0:inf] | real |
| TRD1 | RD temperature coefficient | 0 | from [0:inf] | real |
| TRS1 | RS temperature coefficient | 0 | from [0:inf] | real |
| TNOM | Parm meas temp [C] | - | from (-273.15:inf) | real |
| VBI | Gate junction potential [V] | 0.85 | from [0:inf] | real |
| VTO | Threshold voltage [V] | -2.0 | from [-inf:inf] | real |
| VTOTC | Temperature Coefficient for VTO | 0 | from [-inf:inf] | real |
| VST | Subthreshold potential [V] | 1 | from [-inf:inf] exclude 0 | real |
| XTI | IS temperature coefficient | 0 | from [0:inf] | real |